Resolving impurities in atomic layer deposited aluminum nitride through low cost, high efficiency precursor design

08 December 2020, Version 3


Synthesis, characterization, and use of an amidoalane precursor for the deposition of high-quality and low-impurity aluminum nitride films by atomic layer deposition. This study highlights the importance of smart precursor design in order to deposit high-quality thin films at low cost and high efficiency.



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