Physical Chemistry

Resolving impurities in atomic layer deposited aluminum nitride through low cost, high efficiency precursor design

Abstract

Synthesis, characterization, and use of an amidoalane precursor for the deposition of high-quality and low-impurity aluminum nitride films by atomic layer deposition. This study highlights the importance of smart precursor design in order to deposit high-quality thin films at low cost and high efficiency.

Content

Thumbnail image of AlH2NMe2 AlN manuscript - uploaded version 2.0.pdf