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Inorganic Chemistry

Working Paper

Deposition Study of Indium Trisguanidinate as a Possible Indium Nitride Precursor

Polla Rouf, Nathan J O'Brien, Sydney C. Buttera, Sean Barry, Henrik Pedersen

Version 1 posted 31 October 2018

448

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Physical Chemistry

Working Paper

Resolving impurities in atomic layer deposited aluminum nitride through low cost, high efficiency precursor design

Sydney Buttera, Polla Rouf, Petro Deminskyi, Nathan O'Brien, Henrik Pedersen, Sean Barry

Version 3 posted 08 December 2020

774

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Inorganic Chemistry

Working Paper

Hexacoordinated Gallium(III) Triazenide Precursor for Epitaxial Gallium Nitride by Atomic Layer Deposition

Polla Rouf, Rouzbeh Samii, Karl Rönnby, Babak Bakhit, Sydney Buttera, Ivan Martinovic, Lars Ojamäe, Chih-Wei Hsu, Justinas Palisaitis, Vadim Kessler, Henrik Pedersen, Nathan O'Brien

Version 1 posted 05 November 2020

392

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1

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Materials Science

Working Paper

Chemical Vapor Deposition of Metallic Films Using Plasma Electrons as Reducing Agents

Hama Nadhom, Daniel Lundin, Polla Rouf, Henrik Pedersen

Version 2 posted 18 December 2019

730

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Inorganic Chemistry

Working Paper

Reduction of carbon impurities in aluminium nitride from time-resolved chemical vapour deposition using trimethylaluminum

Polla Rouf, Pitsiri Sukkaew, Lars Ojamäe, Henrik Pedersen

Version 2 posted 11 May 2020

592

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Materials Science

Working Paper

Area Selective Deposition of Metals from the Electrical Resistivity of the Substrate

Hama Nadhom, Robert Boyd, Polla Rouf, Daniel Lundin, Henrik Pedersen

Version 2 posted 08 April 2021

424

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Inorganic Chemistry

Working Paper

Epitaxial GaN using Ga(NMe2)3 and NH3 Plasma by Atomic Layer Deposition

Polla Rouf, Nathan J O'Brien, Sydney C. Buttera, Ivan Martinovic, Babak Bakhit, Erik Martinsson, Justinas Palisaitis, Chih-Wei Hsu, Henrik Pedersen

Version 2 posted 21 May 2020

679

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Physical Chemistry

Working Paper

Surface Ligand Removal in Atomic Layer Deposition of GaN Using Triethylgallium

Petro Deminskyi, Chih-Wei Hsu, Babak Bakhit, Polla Rouf, Henrik Pedersen

Version 1 posted 03 November 2020

288

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Materials Science

Working Paper

Atomic Layer Deposition of InN Using Trimethylindium and Ammonia Plasma

Petro Deminskyi, Polla Rouf, Ivan G. Ivanov, Henrik Pedersen

Version 3 posted 28 January 2019

1,267

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Inorganic Chemistry

Working Paper

In-situ Activation of a Highly Volatile and Thermally Stable Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Deposition

Nathan O'Brien, Polla Rouf, Rouzbeh Samii, Karl Rönnby, Sydney C. Buttera, Ivan G. Ivanov, Vadim Kessler, Lars Ojamäe, Henrik Pedersen

Version 1 posted 28 November 2019

516

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Refine Search

16 results in Polla Rouf in Authors: Polla Rouf

Deposition Study of Indium Trisguanidinate as a Possible Indium Nitride Precursor

Resolving impurities in atomic layer deposited aluminum nitride through low cost, high efficiency precursor design

Hexacoordinated Gallium(III) Triazenide Precursor for Epitaxial Gallium Nitride by Atomic Layer Deposition

Chemical Vapor Deposition of Metallic Films Using Plasma Electrons as Reducing Agents

Reduction of carbon impurities in aluminium nitride from time-resolved chemical vapour deposition using trimethylaluminum

Area Selective Deposition of Metals from the Electrical Resistivity of the Substrate

Epitaxial GaN using Ga(NMe2)3 and NH3 Plasma by Atomic Layer Deposition

Surface Ligand Removal in Atomic Layer Deposition of GaN Using Triethylgallium

Atomic Layer Deposition of InN Using Trimethylindium and Ammonia Plasma

In-situ Activation of a Highly Volatile and Thermally Stable Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Deposition

16 results in Authors: Polla Rouf