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Materials Science

Working Paper

Chemical Vapor Deposition of Metallic Films Using Plasma Electrons as Reducing Agents

Hama Nadhom, Daniel Lundin, Polla Rouf, Henrik Pedersen

Version 2 posted 18 December 2019

782

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Physical Chemistry

Working Paper

Resolving impurities in atomic layer deposited aluminum nitride through low cost, high efficiency precursor design

Sydney Buttera, Polla Rouf, Petro Deminskyi, Nathan O'Brien, Henrik Pedersen, Sean Barry

Version 3 posted 08 December 2020

992

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Materials Science

Working Paper

Area Selective Deposition of Iron Films Using Temperature Sensitive Masking Materials and Plasma Electrons as Reducing Agents

Hama Nadhom, Yusheng Yuan, Polla Rouf, Niclas Solin, Henrik Pedersen

Version 2 posted 11 May 2021

588

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Physical Chemistry

Working Paper

Surface Ligand Removal in Atomic Layer Deposition of GaN Using Triethylgallium

Petro Deminskyi, Chih-Wei Hsu, Babak Bakhit, Polla Rouf, Henrik Pedersen

Version 1 posted 03 November 2020

340

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Inorganic Chemistry

Working Paper

Reduction of carbon impurities in aluminium nitride from time-resolved chemical vapour deposition using trimethylaluminum

Polla Rouf, Pitsiri Sukkaew, Lars Ojamäe, Henrik Pedersen

Version 2 posted 11 May 2020

678

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Inorganic Chemistry

Working Paper

In0.5Ga0.5N Layers by Atomic Layer Deposition

Polla Rouf, Justinas Palisaitis, Babak Bakhit, Nathan O'Brien, Henrik Pedersen

Version 1 posted 26 May 2021

286

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Materials Chemistry

Working Paper

Thermal atomic layer deposition of In2O3 thin films using a homoleptic indium triazenide precursor and water

Pamburayi Mpofu, Polla Rouf, Nathan O'Brien, Urban Forsberg, Henrik Pedersen

Version 2 posted 09 February 2022

711

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Materials Science

Working Paper

Fabrication of Semi-Transparent SrTaO2N Photoanodes with a GaN Underlayer Grown via Atomic Layer Deposition

Can Lu, Nathan O´Brien, Polla Rouf, Richard Dronskowski, Henrik Pedersen, Adam Slabon

Version 1 posted 12 October 2021

319

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Inorganic Chemistry

Working Paper

Epitaxial GaN using Ga(NMe2)3 and NH3 Plasma by Atomic Layer Deposition

Polla Rouf, Nathan J O'Brien, Sydney C. Buttera, Ivan Martinovic, Babak Bakhit, Erik Martinsson, Justinas Palisaitis, Chih-Wei Hsu, Henrik Pedersen

Version 2 posted 21 May 2020

771

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Inorganic Chemistry

Working Paper

Hexacoordinated Gallium(III) Triazenide Precursor for Epitaxial Gallium Nitride by Atomic Layer Deposition

Polla Rouf, Rouzbeh Samii, Karl Rönnby, Babak Bakhit, Sydney Buttera, Ivan Martinovic, Lars Ojamäe, Chih-Wei Hsu, Justinas Palisaitis, Vadim Kessler, Henrik Pedersen, Nathan O'Brien

Version 1 posted 05 November 2020

512

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1

Citations

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16 results in Polla Rouf in Authors: Polla Rouf

Chemical Vapor Deposition of Metallic Films Using Plasma Electrons as Reducing Agents

Resolving impurities in atomic layer deposited aluminum nitride through low cost, high efficiency precursor design

Area Selective Deposition of Iron Films Using Temperature Sensitive Masking Materials and Plasma Electrons as Reducing Agents

Surface Ligand Removal in Atomic Layer Deposition of GaN Using Triethylgallium

Reduction of carbon impurities in aluminium nitride from time-resolved chemical vapour deposition using trimethylaluminum

In0.5Ga0.5N Layers by Atomic Layer Deposition

Thermal atomic layer deposition of In2O3 thin films using a homoleptic indium triazenide precursor and water

Fabrication of Semi-Transparent SrTaO2N Photoanodes with a GaN Underlayer Grown via Atomic Layer Deposition

Epitaxial GaN using Ga(NMe2)3 and NH3 Plasma by Atomic Layer Deposition

Hexacoordinated Gallium(III) Triazenide Precursor for Epitaxial Gallium Nitride by Atomic Layer Deposition

16 results in Authors: Polla Rouf