Physical Chemistry

A Low Cost, High Efficiency TMA-Replacement for the Deposition of High-Quality Aluminum Nitride by Atomic Layer Deposition

Abstract

Synthesis, characterization, and use of an amidoalane precursor for the deposition of high-quality and low-impurity aluminum nitride films by atomic layer deposition. This study highlights the importance of smart precursor design in order to deposit high-quality thin films at low cost and high efficiency.

Content

Thumbnail image of AlH2NMe2 AlN manuscript - final version.pdf