A Low Cost, High Efficiency TMA-Replacement for the Deposition of High-Quality Aluminum Nitride by Atomic Layer Deposition

Sydney Buttera; Polla Rouf; Petro Deminskyi; Nathan O'Brien; Sean Barry; Henrik Pedersen

doi:10.26434/chemrxiv.13129910.v1

Physical Chemistry

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A Low Cost, High Efficiency TMA-Replacement for the Deposition of High-Quality Aluminum Nitride by Atomic Layer Deposition

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Abstract

Synthesis, characterization, and use of an amidoalane precursor for the deposition of high-quality and low-impurity aluminum nitride films by atomic layer deposition. This study highlights the importance of smart precursor design in order to deposit high-quality thin films at low cost and high efficiency.