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AlH2NMe2 AlN manuscript - uploaded version 3.0.pdf (646.22 kB)

Resolving impurities in atomic layer deposited aluminum nitride through low cost, high efficiency precursor design

revised on 07.12.2020, 16:44 and posted on 08.12.2020, 05:43 by Sydney Buttera, Polla Rouf, Petro Deminskyi, Nathan O'Brien, Henrik Pedersen, Sean Barry
Synthesis, characterization, and use of an amidoalane precursor for the deposition of high-quality and low-impurity aluminum nitride films by atomic layer deposition. This study highlights the importance of smart precursor design in order to deposit high-quality thin films at low cost and high efficiency.


Email Address of Submitting Author


Carleton University



ORCID For Submitting Author

Declaration of Conflict of Interest

No conflict of interest.