In0.5Ga0.5N Layers by Atomic Layer Deposition

We present an ALD approach to metastable In_1‑xGa_xN with 0.1 < x < 0.5 based on co-sublimed solid In- and Ga-precursors that were co-sublimed into the deposition chamber in one pulse. A near In_0.5Ga_0.5N film with a bandgap of 1.94 eV was achieved on Si (100) substrate. Epitaxial In_1‑xGa_xN (0002) was successfully grown directly on 4H-SiC (0001).