We present an ALD approach to metastable In1‑xGaxN with 0.1 < x < 0.5 based on co-sublimed solid In- and Ga-precursors that were co-sublimed into the deposition chamber in one pulse. A near In0.5Ga0.5N film with a bandgap of 1.94 eV was achieved on Si (100) substrate. Epitaxial In1‑xGaxN (0002) was successfully grown directly on 4H-SiC (0001).
Henrik Pedersen Linköping University
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InGaN supplementary information submitted