Deposition Study of Indium Trisguanidinate as a Possible Indium Nitride Precursor

31 October 2018, Version 1
This content is a preprint and has not undergone peer review at the time of posting.


A time-resolved chemical vapor deposition process for indium nitride (InN) is reported using tris-N,N-dimethyl-N’,N”-diisopropylguanidinatoindium(III) (1) and ammonia plasma at 200 °C. The deposition was self-limiting with respect to the pulse time of 1, indicative of a surface-controlled deposition chemistry. The films were confirmed to be InN by X-ray photoelectron spectroscopy (XPS) and film thicknesses of 10 nm were measured by X-ray reflectivity (XRR), corresponding to a deposition rate of 0.1 nm/cycle. Grazing incidence X-ray diffraction (GIXRD) showed a hexagonal polycrystalline film with a preferred (002) orientation. Morphology studies suggest an island growth mode. The poor thermal stability of 1, previously discussed in the literature, prevented full characterization of the deposition process and the deposition of thicker films. It is concluded that while 1 can act as an In precursor for InN, its poor thermal stability prevents its practical use.


atomic layer deposition (ALD)
chemical vapor deposition (CVD)

Supplementary materials

suppl-mater submitted


Comments are not moderated before they are posted, but they can be removed by the site moderators if they are found to be in contravention of our Commenting Policy [opens in a new tab] - please read this policy before you post. Comments should be used for scholarly discussion of the content in question. You can find more information about how to use the commenting feature here [opens in a new tab] .
This site is protected by reCAPTCHA and the Google Privacy Policy [opens in a new tab] and Terms of Service [opens in a new tab] apply.