Epitaxial GaN using Ga(NMe2)3 and NH3 Plasma by Atomic Layer Deposition

21 May 2020, Version 2
This content is a preprint and has not undergone peer review at the time of posting.

Abstract

Low temperature deposition of high-quality epitaxial GaN is crucial for its integration in
electronic applications. Chemical vapor deposition at approximately 800 °C using SiC with an
AlN buffer layer or nitridized sapphire as substrates is used to facilitate the GaN growth. Here,
we present a low temperature atomic layer deposition (ALD) process using
tris(dimethylamido)gallium(III) with NH3 plasma. The ALD process shows self-limiting
behaviour between 130-250 °C with a growth rate of 1.4 Å/cycle. The GaN films produced were
crystalline on Si(100) at all deposition temperatures with a near stochiometric Ga/N ratio with
low carbon and oxygen impurities. When GaN was deposited on 4H-SiC, the films grew
epitaxially without the need for an AlN buffer layer, which has never been reported before. The bandgap of the GaN films was measured to be ~3.42 eV and the fermi level showed that the GaN was unintentionally n-type doped. This study shows the potential of ALD for GaN-based
electronic devices.

Keywords

GaN
Epitaxy
thin film
semiconductors
atomic layer deposition

Supplementary materials

Title
Description
Actions
Title
Revised Supporting information
Description
Actions

Comments

Comments are not moderated before they are posted, but they can be removed by the site moderators if they are found to be in contravention of our Commenting Policy [opens in a new tab] - please read this policy before you post. Comments should be used for scholarly discussion of the content in question. You can find more information about how to use the commenting feature here [opens in a new tab] .
This site is protected by reCAPTCHA and the Google Privacy Policy [opens in a new tab] and Terms of Service [opens in a new tab] apply.