Fabrication of Semi-Transparent SrTaO2N Photoanodes with a GaN Underlayer Grown via Atomic Layer Deposition

12 October 2021, Version 1
This content is a preprint and has not undergone peer review at the time of posting.


Quaternary metal oxynitride-based photoanodes with a large light transmittance are promising for high solar-to-hydrogen (STH) conversion efficiency in photoelectrochemical (PEC) tandem cells. Transparent substrates to support PEC water-splitting were fabricated using atomic layer deposition (ALD) to synthesize 30 and 60 nm GaN on SiC sub-strates. A generalized approach was used to grow a quaternary metal oxynitride, i.e. SrTaO2N thin film on the GaN/SiC substrates. The transparency above 60% in the wide solar spectrum highlights its availability of transmit-ting visible light to the rear side. A photocurrent onset at ca. −0.4 V vs. reversible hydrogen electrode (RHE) was achieved by the SrTaO2N/GaN/SiC photoanodes in a 0.1 M NaOH electrolyte under simulated solar irradiation. This paves the way for construction of hierarchically nanostructured tandem PEC cells. This work demonstrates the viabil-ity of integrating ALD in constructing substrates for semi-transparent quaternary metal oxynitride photoanodes.


atomic layer deposition
quaternary metal oxynitrides


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