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Direct Epitaxial Nanometer-Thin InN of High Structural Quality on 4H-SiC by Atomic Layer Deposition

revised on 12.07.2020, 20:13 and posted on 13.07.2020, 09:50 by Chih-Wei Hsu, Petro Deminskyi, Ivan Martinovic, Ivan G. Ivanov, Justinas Palisaitis, Henrik Pedersen
Indium nitride (InN) is a highly promising material for high frequency electronics given its
low band gap and high electron mobility. The development of InN-based devices is hampered
by the limitations in depositing very thin InN films of high quality. We demonstrate growth of
high-structural-quality nanometer thin InN films on 4H-SiC by atomic layer deposition (ALD).
High resolution X-ray diffraction and transmission electron microscopy show epitaxial growth
and an atomically sharp interface between InN and 4H-SiC. The InN film is fully relaxed already after a few atomic layers and shows a very smooth morphology where the low surface
roughness (0.14 nm) is found to reproduced sub-nanometer surface features of the substrate. Raman measurements show an asymmetric broadening caused by grains in the InN film. Our results show the potential of ALD to prepare high quality nanometer-thin InN films for subsequent formation of heterojunctions.


This work was financially supported by the Swedish Foundation for Strategic Research through the project “Time-resolved low temperature CVD for III-nitrides” (No. SSF-RMA 15-0018) and by the Knut and Alice Wallenberg foundation through the project “Bridging the THz gap” (No. KAW 2013.0049). I.G.I. acknowledges support from the VR (Project No. VR 2016- 05362). P.D. acknowledges the Carl Trygger Foundation for a postdoctoral scholarship at Linköping University. The authors acknowledge the Knut and Alice Wallenberg Foundation for support of the Linköping electron microscopy laboratory.


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Linkoping University



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