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Manuscript inherent ASD revised.pdf (557.16 kB)

Area Selective Deposition of Metals from the Electrical Resistivity of the Substrate

preprint
revised on 07.04.2021, 13:11 and posted on 08.04.2021, 05:12 by Hama Nadhom, Robert Boyd, Polla Rouf, Daniel Lundin, Henrik Pedersen

Area selective deposition (ASD) of films only on desired areas of the substrate opens for less complex fabrication of nanoscaled electronics. We show that a newly developed CVD method, where plasma electrons are used as the reducing agent in deposition of metallic thin films, is inherently area selective from the electrical resistivity of the substrate surface. When depositing iron with the new CVD method, no film is deposited on high-resistivity SiO2 surfaces whereas several hundred nm thick iron films are deposited on areas with low resistivity, obtained by adding a thin layer of silver on the SiO2 surface. Based on such a scheme, we show how to use the electric resistivity of the substrate surface as an extension of the ASD toolbox for metal-on-metal deposition.

Funding

Self-limiting deposition of transition metal thin films by pulsed plasma chemistry

Swedish Research Council

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Reductive surface chemistry with plasma electrons

Swedish Research Council

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LAM Research

History

Email Address of Submitting Author

henrik.pedersen@liu.se

Institution

Linkoping University

Country

Sweden

ORCID For Submitting Author

0000-0002-7171-5383

Declaration of Conflict of Interest

Henrik Pedersen and Hama Nadhom have filed a patent on the described CVD method.

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