Indium and gallium nitride are important semi-conductor materials with desirable properties for high-frequency and power electronics. We have previously demonstrated high quality ALD grown InN and GaN using the hexacoordinated di-isopropyltriazenide In(III) and Ga(III) precursors. Herein we report the structural and thermal properties their analogues employing combinations of isopropyl, sec-butyl and tert-butyltriazenide alkyl groups on the exocyclic nitrogen of the triazenide ligand. The new triazenide compounds were all found to be volatile (80-120 ºC, 0.5 mbar) and showed very good thermal stability (200 and 300 °C). These new triazenide analogues provide a set of precursors whose thermal properties are determined and can be accordingly tailored by strategic choice of exocyclic nitrogen alkyl substituents.
Supporting Information for Synthesis, Structure and Thermal Properties of Volatile Indium and Gallium Triazenides