Isothermal growth and stacking evolution in highly uniform AB-stacked bilayer graphene

31 December 2019, Version 1
This content is a preprint and has not undergone peer review at the time of posting.


Controlling the stacking order in bilayer graphene (BLG) allows realising unique physical properties. In particular, the possibility of tuning the band gap in AB-stacked BLG (AB-BLG) has a great technological importance for electronic and optoelectronics applications. Most of current methods to produce AB-BLG suffer from inhomogeneous layer thickness and/or coexistence with twisted BLG. Here, we demonstrate a method to synthesise highly pure large-area AB-BLG by chemical vapour deposition (CVD) using Cu-Ni films. Increasing the reaction time resulted in a gradual increase of the AB stacking, with the BLG eventually free from twist regions for the longer times (99.4 % of BLG has AB stacking), due to catalyst-assisted continuous BLG reconstruction driven by carbon dissolution-segregation processes. The band gap opening was confirmed by the electrical measurements. The concept of the continuous reconstruction to achieve highly pure AB-BLG offers a new strategy to control the stacking order of catalytically grown two-dimensional materials.


bilayer graphene
AB stacking
band gap
Field-effect transistor devices
2D materials


Comments are not moderated before they are posted, but they can be removed by the site moderators if they are found to be in contravention of our Commenting Policy [opens in a new tab] - please read this policy before you post. Comments should be used for scholarly discussion of the content in question. You can find more information about how to use the commenting feature here [opens in a new tab] .
This site is protected by reCAPTCHA and the Google Privacy Policy [opens in a new tab] and Terms of Service [opens in a new tab] apply.