Deposition Study of Indium Trisguanidinate as a Possible Indium Nitride Precursor

<p>A time-resolved chemical vapor deposition process for indium nitride (InN) is reported using tris-<i>N</i>,<i>N</i>-dimethyl-<i>N</i>’,<i>N</i>”-diisopropylguanidinatoindium(III) (<b>1</b>) and ammonia plasma at 200 °C. The deposition was self-limiting with respect to the pulse time of <b>1</b>, indicative of a surface-controlled deposition chemistry. The films were confirmed to be InN by X-ray photoelectron spectroscopy (XPS) and film thicknesses of 10 nm were measured by X-ray reflectivity (XRR), corresponding to a deposition rate of 0.1 nm/cycle. Grazing incidence X-ray diffraction (GIXRD) showed a hexagonal polycrystalline film with a preferred (002) orientation. Morphology studies suggest an island growth mode. The poor thermal stability of <b>1</b>, previously discussed in the literature, prevented full characterization of the deposition process and the deposition of thicker films. It is concluded that while <b>1</b> can act as an In precursor for InN, its poor thermal stability prevents its practical use. </p>