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Abstract
The efficiencies (s) of photo-volatile (PV) of crystalline silicon (c-Si) with energy band gap (Eg=1.1eV) was estimated by both of spectra integration and theory of SQ limit. β-FeSi2 (Eg=0.85eV) film was selected for Si PV (Si/β-FeSi2) as an attached IR absorber, is expected to be shown high refraction index (extinction coefficient: ) for high absorption coefficient (α(hν)) for air mass (AM) 1.5 irradiation (from Köppen climate classification: Cfa to BW). The decayed and recovered currents and powers profiles caused by shadows and/or obstacles (clouds, sands etc.) as a function of voltage (vout+Vbias) were reproduced, were carried out for simple Maximum Power Point Tracking (MPPT) controlling using by improved gravity search algorithm (IGSA).
