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Abstract
Different approaches are used in tailoring properties of thin films to meet requirements for specific applications. This study comprises work done on atomic layer deposition (ALD) of AlxTi1-xN employing the co-evaporation approach using tris-dimethylamido aluminum (TDMAA, Al(NMe2)3) and tetrakis(dimethylamido)titanium(IV) (TDMAT, Ti(NMe2)4), and ammonia (NH3) plasma. High Al-content, low impurity (O and C, both <5 at.%) films with uniform grain size distribution and dense morphology were deposited. The as-deposited films were X-ray amorphous, but mixed crystallographic phases were observed when the films were annealed at 700 °C. The deposited aluminum rich AlxTi1-xN films show an alternative way for ternary material depositions.
