Process Characterization of Epitaxial SiP [100] and [110] Films

Epitaxial SiP films are necessary to enable semiconductor scaling. One of the key problems arising from highly doped epitaxial growth is the difference in growth rate for different crystal orientations. In this paper, we analyze the impact of different process parameters on the [100] and [110] oriented Si substrates. We characterized the thickness and substitutional doping by using high resolution X-ray diffraction (HRXRD) and reciprocal space maps (RSM). We look at every single independent process variable, i:e temperature, pressure and all the gas flows and characterize how the changes in each variable affects the overall [100]/[110] thickness and doping ratio. We also analyze the chemical kinetics o Si:P deposition on [100] and [110] substrate individually.