Deterministic grayscale nanotopography to engineer mobilities in strained MoS2 FETs

20 March 2024, Version 1


Field-effect transistors (FETs) based on two-dimensional materials (2DMs) with atomically thin channels have emerged as a promising platform for beyond-silicon electronics. However, low carrier mobility in 2DM transistors driven by phonon scattering, remains a critical challenge. To address this issue, we propose the controlled introduction of localized biaxial tensile strain as an effective mean to inhibit electron-phonon scattering in 2DM. Strain is achieved by conformally adhering the 2DM via van-der-Waals forces to a dielectric layer previously nanoengineered with a gray-tone topography. Our results show that a monolayer MoS2 FETs under tensile strain achieves an 8-fold increase in on-state current reaching mobilities of 185 cm2/Vs at room temperature, in good agreement with theoretical calculations. The present work on nanotopographic grayscale surface engineering and the use of high-quality dielectric materials has the potential to find application in the nanofabrication of photonic and nanoelectronic devices.


2DM transistor
electron mobility
thermal scanning probe lithography
grayscale nanolithography
strain engineering

Supplementary materials

Supplementary Information
Additional process details and experiments.


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