Low-Temperature, Single-Source, Chemical Vapor Deposition of Molybdenum Nitride Thin Films

08 May 2023, Version 1
This content is a preprint and has not undergone peer review at the time of posting.


The 1,4-di-tert-butyl-1,3-diazabutadiene adduct of bis(tert-butylimido)dichloro-molybdenum(VI), (tBuN)2MoCl2·dad, was used as a single-source precursor for the chemical vapor deposition of molybdenum nitride from 350 – 600ºC. Deposition at 400 ºC had a growth rate of 55 nm·h−1 and was comprised of a mixture of Mo2N and MoN, based on X-ray photoelectron spectroscopy and grazing-incidence X-ray diffraction results. The films are essentially featureless and are as smooth as the underlying substrate, based on atomic force microscopy measurements. Because the depositions could be carried out at a low temperature there was minimal carbon (1.4%) inclusion in the film as shown by XPS.


Molybdenum Nitride
Chemical Vapor Deposition
Thin Films
Molybdenum Imides

Supplementary materials

Supporting Information
QCM data, SEM and AFM images, EDS spectra, UV-Vis spectra, GIXRD results.


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