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Abstract
Luminescent colloidal silicon quantum dots (SiQDs) have been explored as alternatives to metal-based QDs for light-emitting diodes (LEDs) because of the abundance and biocompatibility of silicon. To date, the broad electroluminescence (EL) bandwidth (> 100 nm) and blue-shifting of EL at high applied voltages of SiQD-LEDs have been outstanding challenges that limited competitive spectral purity and device stability. Herein, we report the fabrication and testing of SiQD-LEDs that incorporate a Fabry-Pérot cavity that exhibit a narrow spectral linewidth as low as ca. 23 nm. The presented devices also provide spectral and visual stability from +4 V to +8 V, as well as spectral tunability.
Supplementary materials
Title
Supporting Information for: Colloidal Silicon Quantum Dot-Based Cavity Light-Emitting Diodes with Narrowed and Tunable Electroluminescence
Description
FT-IR spectra, TGA and XP spectra of C6-SiQDs. Reflectance spectra of Ag thin films. Work function and profilometry measurements of ITO layer. Refractive indices of the active layers. Optoelectronic characterizations and EL spectra analysis of normal SiQD-LED. Reflectance and EL spectra analysis of SiQD-cLEDs. Angle-dependent and voltage-dependent EL of 50-cLED. Optoelectronic characterizations of 50-cLED. Calculations for PL and external quantum efficiency, FWHM, FSR, Q-factor, and Finesse.
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