Co-design of zinc titanium nitride semiconductor towards durable photoelectrochemical applications

25 March 2022, Version 2

Abstract

Photoelectrochemical fuel generation is a promising route to sustainable liquid fuels produced from water and captured carbon dioxide with sunlight as the energy input. Development of such technologies requires photoelectrode materials that are both photocatalytically active and operationally stable in harsh oxidative and/or reductive electrochemical environments. Such photocatalysts can be discovered based on co-design principles, wherein design for stability is based on the propensity for the photocatalyst to self-passivate under operating conditions and design for photoactivity is based on the ability to integrate the photocatalyst with established semiconductor substrates. Here we report on synthesis and characterization of zinc titanium nitride (ZnTiN2) that follows these design rules by having a wurtzite-derived crystal structure and showing self-passivating surface oxides created by electrochemical polarization. The sputtered ZnTiN2 thin films have optical absorption onsets below 2 eV and n-type electrical conduction of 0.1 S/cm. The band gap of this material is reduced from the 3.5 eV theoretical value by cation site disorder, and the impact of cation antisites on the band structure of ZnTiN2 is explored using density functional theory. Under electrochemical polarization, the ZnTiN2 surfaces have TiO2- or ZnO-like character, consistent with Materials Project Pourbaix calculations predicting the formation of stable solid phases under near-neutral pH. These results show that ZnTiN2 is a promising candidate for photoelectrochemical liquid fuel generation and demonstrate a new materials design approach to other photoelectrodes with self-passivating native operational surface chemistry.

Keywords

photoelectrochemistry
thin film
nitride
carbon dioxide reduction reaction
Pourbaix
DFT

Supplementary materials

Title
Description
Actions
Title
Supplementary information: Co-design of zinc titanium nitride semiconductor towards durable photoelectrochemical applications
Description
Supplementary information for: Co-design of zinc titantium nitride semiconductor towards durable photoelectrochemical applications, including annealing experiments, deposition parameters, grazing incidence XRD, calculated Pourbaix diagrams, and post-electrochemical polarization XRD.
Actions

Comments

Comments are not moderated before they are posted, but they can be removed by the site moderators if they are found to be in contravention of our Commenting Policy [opens in a new tab] - please read this policy before you post. Comments should be used for scholarly discussion of the content in question. You can find more information about how to use the commenting feature here [opens in a new tab] .
This site is protected by reCAPTCHA and the Google Privacy Policy [opens in a new tab] and Terms of Service [opens in a new tab] apply.