Abstract
The high chemical stability of SU-8 makes it irreplaceable for a wide range of applica-
tions, most notably as a lithography photoresist for micro and nanotechnology. This
advantage becomes a problem when there is a need to remove SU-8 from the fabricated
devices. Researchers have been struggling for two decades with this problem, and al-
though a number of partial solutions have been found, this difficulty has limited the
applications of SU-8. Here we demonstrate a fast, reproducible, and comparatively gen-
tle method to chemically remove SU-8 photoresist. An ether cleavage mechanism for the
observed reaction is proposed, and the hypothesis is tested with ab initio quantum chem-
ical calculations. Also described are a polymer-metal adhesion treatment, and a comple-
mentary removal method, based on atomic hydrogen inductively coupled plasma.