Abstract
Understanding the role of defect sites on the mechanism and lifetime of photoexcited state relaxation is critical for the ration-al design of advanced materials. Here, the ultrafast electronic relaxation dynamics of neutral nickel oxide clusters were inves-tigated with femtosecond pump-probe spectroscopy and supported with theoretical calculations to reveal that their excited state lifetimes are strongly dependent on the nature of the electronic transition. Absorption of a UV photon produces short lived (lifetime ~110 fs) dynamics in stoichiometric (NiO)n clusters (n < 6) that are attributed to a ligand to metal charge transfer (LMCT) and produces metallic-like electron-electron scattering. Oxygen vacancies introduce excitations with Ni-3d→Ni-4s and 3d→4p character, which increases the lifetimes of the sub-picosecond response by up to 80% and enables the formation of long-lived (lifetimes > 2.5 ps) states. The atomic precision and tunability of gas phase clusters are employed to highlight a unique reliance on the Ni orbital contributions to the photoexcited lifetimes, providing new insights to the anal-ogous band edge excitation dynamics of strongly correlated bulk-scale NiO materials.