Materials Science

A High-k and Low Energy-disorder Spiro-nanopolymer Semiconductor

Abstract

Gridization become the rising toolbox of cross-scale chemistry that update the organic pi-conjugated polymers into nano-polymers with a nano-scale persistence length that offer the cornerstone to overcome the molecular limitation for the high-performance fourth-generation semiconductors. In this work, spiro-polygridization indeed exhibit the ultralong persistence length of ~41 nm with the extraordinary semiconducting behaviors such as a hole mobility of 3.94 × 10-3 cm2 V-1 s-1 and an ultralow energy disorder (<50 meV) as well as the high dielectric constant (k = 8.43). Gridochemistry open a way to organic intelligent multimedia facing organic intelligence.

Content

Thumbnail image of Manuscript N2 - 7-2-s - XLH.pdf

Supplementary material

Thumbnail image of SI-NM-3-2-s.docx
SI-NM-3-2-s
Thumbnail image of Manuscript N2 - 7-2-s - XLH.docx
Manuscript N2 - 7-2-s - XLH