Physical Chemistry

Oxygen-Enhanced Upconversion of near Infrared Light from Below the Silicon Band Gap

Abstract

Here we demonstrate an upconversion composition using semiconductor nanocrystal sensitizers that employs molecular triplet states below the singlet oxygen energy. We show that, contrary to the usual expectation, the admission of oxygen enhances the intensity of upconverted light and significantly speeds up the photochemical processes involved. Further, we demonstrate photochemical upconversion from below the silicon band gap in the presence of oxygen.

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Unrevised version

Content

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Supplementary material

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Supplementary Materials