Oxygen-Enhanced Upconversion of near Infrared Light from Below the Silicon Band Gap

13 March 2019, Version 1
This content is a preprint and has not undergone peer review at the time of posting.


Here we demonstrate an upconversion composition using semiconductor nanocrystal sensitizers that employs molecular triplet states below the singlet oxygen energy. We show that, contrary to the usual expectation, the admission of oxygen enhances the intensity of upconverted light and significantly speeds up the photochemical processes involved. Further, we demonstrate photochemical upconversion from below the silicon band gap in the presence of oxygen.


triplet-triplet annihilation
silicon photovoltaics
singlet oxygen

Supplementary materials

Supplementary Materials


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