Quantum Tunneling Characteristics in Monolayer Graphene Modulated by Multiple Electrostatic Barriers

01 June 2021, Version 1
This content is a preprint and has not undergone peer review at the time of posting.

Abstract

The transmission coefficient and electronic conductance of a graphene monolayer in the presence of multi-electrostatic barriers are theoretically investigated using the transfer matrix method (TMM). The transmission coefficient, conductance, and Fano factor are evaluated as a function of the number and width of the barriers, angle/energy of incidence, as well as the applied potential at each barrier. We find that the transmission coefficient presents a series of resonances that depends on the number and widths of the barriers. Furthermore, we show that the resonant states can be suppressed for larger incidence angles and barrier widths and tuned towards lower energies. Consequently, the proposed structure can be used to fabricate new optoelectronic devices based on (ON/OFF) states as tunable field-effect transistors.

Keywords

graphene
conductance
transfer matrix method
transmission coefficient
resonant states
optoelectronic devices
transistors
electronic conductance
graphene monolayer

Supplementary materials

Title
Description
Actions
Title
Manuscript revised final equations fixed ver2
Description
Actions

Comments

Comments are not moderated before they are posted, but they can be removed by the site moderators if they are found to be in contravention of our Commenting Policy [opens in a new tab] - please read this policy before you post. Comments should be used for scholarly discussion of the content in question. You can find more information about how to use the commenting feature here [opens in a new tab] .
This site is protected by reCAPTCHA and the Google Privacy Policy [opens in a new tab] and Terms of Service [opens in a new tab] apply.