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WS2/MoS2 Heterostructures via Thermal Treatment of MoS2 Layers Electrostatically Functionalized with W3S4 Molecular Clusters

preprint
submitted on 23.01.2020 and posted on 27.01.2020 by Marc Morant-Giner, Isaac Brotons-Alcazar, Nikita Y. Shmelev, Artem L. Gushchin, Luke Norman, Andrei N. Khlobystov, Antonio Alberola, Sergio tatay, J. Canet-Ferrer, Alicia Forment-Aliaga, Eugenio Coronado
The preparation of 2D stacked layers that combine flakes of different nature, gives rise to countless number of heterostructures where new band alignments, defined at the interfaces, control the electronic properties of the system. Among the large family of 2D/2D heterostructures, the one formed by the combination of the most common semiconducting transition metal dichalcogenides WS2/MoS2, has awaken great interest due to its photovoltaic and photoelectrochemical properties. Solution as well as dry physical methods have been developed to optimize the synthesis of these heterostructures. Here a suspension of negatively charged MoS2 flakes is mixed with a methanolic solution of a cationic W3S4-core cluster, giving rise to a homogeneous distribution of the clusters over the layers. In a second step, a calcination under N2 of this molecular/2D heterostructure leads to the formation of clean WS2/MoS2 heterostructures where the photoluminescence of both counterparts is quenched, proving an efficient interlayer coupling. Thus, this chemical method combines the advantages of a solution approach (simple, scalable and low-cost) with the good quality interfaces reached by using more complicated traditional physical methods.

Funding

MAT2017-89528

CTQ2017-89993

Excellence Unit María de Maeztu MDM-2015-0538

ERC-Advanced Grant MOL-2D

COST-MOLSPIN-CA15128 Molecular Spintronics Project

Prometeo Program of excellence

GentT program: CIDEGENT/2018/005

RYC-2016-19817

History

Email Address of Submitting Author

alicia.forment@uv.es

Institution

Instituto de Ciencia Molecular (ICMol), University of Valencia

Country

Spain

ORCID For Submitting Author

0000-0003-0742-0457

Declaration of Conflict of Interest

There are no conflicts to declare

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