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The challenge of determining the crystal structure of epitaxial 0001 oriented sp2-BN films

preprint
submitted on 30.01.2018 and posted on 31.01.2018 by Mikhail Chubarov, Hans Högberg, Anne Henry, Henrik Pedersen

Boron nitride (BN) as a thin film is promising for many future electronic applications. On technologically important substrates, 0001 α-Al2O3 and 0001 4H/6H-SiC, chemical vapor deposition yields epitaxial sp2-BN films oriented around the c-axis. Here, we seek to point out that sp2-BN can form two different polytypes; hexagonal BN (h-BN) and rhombohedral BN (r-BN), only differing in the stacking of the basal planes but with identical distance between the basal planes and in-plane lattice parameters. This makes structural identification challenging in c-axis oriented films. We suggest the use of a combination of high-resolution electron microscopy with careful sample preparation and thin film X-ray diffraction techniques like pole figure measurements and glancing incidence (in-plane) diffraction to fully distinguish h-BN from r-BN.

Funding

Swedish Research Council (VR: grant Nr. 621-2013-5585), Carl Tryggers Stiftelse (Nr. 12:175), the Swedish Foundation for Strategic Research (SSK IS-14-0027) and the Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linköping University (Faculty Grant SFO Mat LiU 2009 00971)

History

Email Address of Submitting Author

henrik.pedersen@liu.se

Email Address(es) for Other Author(s)

mikhail.chubarov@gmail.com; hans.hogberg@liu.se

Institution

Linköping University

Country

SWEDEN

ORCID For Submitting Author

0000-0002-7171-5383

Declaration of Conflict of Interest

No conflicts of interests

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Read the published paper

in Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

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