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ALD of GaN from TEG submitted.pdf (620.73 kB)

Surface Ligand Removal in Atomic Layer Deposition of GaN Using Triethylgallium

submitted on 02.11.2020, 17:29 and posted on 03.11.2020, 12:53 by Petro Deminskyi, Chih-Wei Hsu, Babak Bakhit, Polla Rouf, Henrik Pedersen
Gallium nitride (GaN) is one of the most important semiconductor materials in modern electronics. While GaN films are routinely deposited by chemical vapor deposition at around 1000 °C, low-temperature routes for GaN deposition need to be better understood. Herein, we present an atomic layer deposition (ALD) process for GaN-based on triethyl gallium (TEG) and ammonia plasma and show that the process can be improved by adding a reactive pulse between the TEG and ammonia plasma, making it an ABC-type pulsed process. We show that the material quality of the deposited GaN is not affected by the B-pulse, but that the film growth per ALD cycle increase when a B-pulse is added. We suggest that this can be explained by removal of ethyl ligands from the surface by the B-pulse, enabling a more efficient nitridation by the ammonia plasma. We show that the B-pulsing can be used to enable GaN deposition with a thermal ammonia pulse, albeit of X-ray amorphous films.


This project was funded by the Swedish Foundation for Strategic Research through the project “Time-resolved low-temperature CVD for III-nitrides” (SSF-RMA 15-0018) and by the Knut and Alice Wallenberg Foundation through the project “Bridging the THz gap” (KAW 2013.0049). PD acknowledges the Carl Trygger Foundation for a post-doctoral scholarship at Linköping University.


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Linköping University



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Declaration of Conflict of Interest

No conflicts to declare