These are preliminary reports that have not been peer-reviewed. They should not be regarded as conclusive, guide clinical practice/health-related behavior, or be reported in news media as established information. For more information, please see our FAQs.
Reevaluating the Quantification of Substitution Level of Monolayers on Silicon Surfaces_May7.pdf (4.9 MB)

Reconsidering XPS Quantification of Substitution Levels of Monolayers on Unoxidized Silicon Surfaces

submitted on 07.05.2020, 18:12 and posted on 08.05.2020, 14:16 by Minjia Hu, Erik Luber, Jillian Buriak
In this preprint, we reevaluate the use of X-ray photoelectron spectroscopy (XPS) to determine substitution levels of reactions on non-oxidized silicon surfaces. XPS is the most commonly used method to determine the yields of reactions on surfaces. We go back to the most basic assumptions, and work through the calculations to provide a revised set of calculations that take into account (i) possible adventitious hydrocarbon contamination, (ii) the effect of choosing a different silicon crystal face [Si(100) versus Si(111)], and (iii) the utility of choosing a small heteroatom tag to enable a more accurate measure of substitution levels. We provide a simple algorithm and summary of the equations one can use to make it easy for the reader/researcher.



Alberta Innovates

Canada Research Chairs

Future Energy Systems (FES) of the University of Alberta


Email Address of Submitting Author


University of Alberta



ORCID For Submitting Author


Declaration of Conflict of Interest

No conflicts of interest.

Version Notes

Version 1 submitted to ChemRxiv on May 7, 2020.