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Photoluminescence Emission Induced by Localized States in Halide Passivated Colloidal WS2 nanoflakes.pdf (3.33 MB)

Photoluminescence Emission Induced by Localized States in Halide Passivated Colloidal Two-Dimensional WS2 Nanoflakes

submitted on 18.07.2019, 08:24 and posted on 19.07.2019, 13:21 by Rosanna Mastria, Anna Loiudice, Jan Vávra, Concetta Nobile, Riccardo Scarfiello, P. Davide Cozzoli, Nicola Sestu, Daniela Marongiu, Francesco Quochi, Raffaella Buonsanti, Michele Saba, Arrigo Calzolari, Aurora Rizzo

Engineering physicochemical properties of two-dimensional transition metal dichalcogenide (2D-TMD) materials by surface manipulation is essential for their practical and large-scale application especially for colloidal 2D-TMDs that are plagued by the unintentional formation of structural defects during the synthetic procedure. However, the available methods to manage surface states of 2D-TMDs in solution-phase are still limited hampering the production of high quality colloidal 2D-TMD inks to be straightforwardly assembled into actual devices. Here, we demonstrate an efficient solution-phase strategy to passivate surface defect states of colloidally synthetized WS2 nanoflakes with halide ligands, resulting in the activation of the photoluminescence emission. Photophysical investigation and density functional theory calculations suggest that halide atoms enable the suppression of non-radiative recombination through the elimination deep gap trap states, and introduce localized states in the energy band structure from which excitons efficiently recombine. Halide passivated WS2 nanoflakes importantly preserve colloidal stability and photoluminescence emission after several weeks of storing in ambient atmosphere, corroborating the potential of our developed 2D-TMD inks.


SIR project “Two-Dimensional Colloidal Metal Dichalcogenides based Energy-Conversion Photovoltaics” (2D ECO), Bando SIR (Scientific Independence of young Researchers) 2014 MIUR Decreto Direttoriale 23 gennaio 2014 no. 197 (project number RBSI14FYVD, CUP: B82I15000950008)


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CNR NANOTEC - Institute of Nanotechnology



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Declaration of Conflict of Interest

The authors declare no competing interests