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Microstructure and Materials Properties of Understoichiometric TiBx Thin Films Grown by HiPIMS

submitted on 03.07.2020, 12:36 and posted on 06.07.2020, 06:22 by Jimmy Thörnberg, Justinas Palisaitis, Niklas Hellgren, Fedor Klimashin, Naureen Ghafoor, Igor Zhirkov, Clio Azina, Jean-Luc Battaglia, Andrzej Kusiak, Maurico A. Sorica, J.E. Greene, Lars Hultman, Ivan Petrov, Per Persson, johanna Rosen

In the present research article we report synthesis of TiBx, 1.43n-situ mass- and energy-spectroscopy is used to explain the obtained compositional range. Excess B in overstoichiometric TiBx thin films from DCMS results in a hardness up to 37.7±0.8 GPa, attributed to the formation of an amorphous B-rich tissue phase separating stoichiometric TiB2 columnar structures. With a particular focus on characterization of the understoichiometric samples, we show that understoichiometric TiB1.43 thin films synthesized by HiPIMS exhibit a superior hardness of 43.9±0.9 GPa, where the deficiency of B is found to be accommodated by Ti planar defects. The apparent fracture toughness, electrical resistivity and thermal conductivity of the same sample is 4.2±0.1 MPa√m, 367±7 μΩ·cm and 5.1 W/(m.K), respectively, as compared to corresponding values for overstoichiometric TiB2.20 DCMS thin film samples of 3.2±0.1 MPa√m, 309±4 μΩ·cm and 3.0 W/(m.K).


Email Address of Submitting Author


Thin Film Physics Division, IFM, Linköping University



ORCID For Submitting Author


Declaration of Conflict of Interest

There are no conflicts to declare.