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Isothermal growth and stacking evolution in highly uniform AB-stacked bilayer graphene

preprint
submitted on 26.12.2019 and posted on 31.12.2019 by Pablo Solís-Fernández, Yuri Terao, Kenji Kawahara, Kosuke Nagashio, Yung-Chang Lin, Keisuke Yamamoto, Hiroshi Nakashima, Hiroki Hibino, Kazu Suenaga, Hiroki Ago
Controlling the stacking order in bilayer graphene (BLG) allows realising unique physical properties. In particular, the possibility of tuning the band gap in AB-stacked BLG (AB-BLG) has a great technological importance for electronic and optoelectronics applications. Most of current methods to produce AB-BLG suffer from inhomogeneous layer thickness and/or coexistence with twisted BLG. Here, we demonstrate a method to synthesise highly pure large-area AB-BLG by chemical vapour deposition (CVD) using Cu-Ni films. Increasing the reaction time resulted in a gradual increase of the AB stacking, with the BLG eventually free from twist regions for the longer times (99.4 % of BLG has AB stacking), due to catalyst-assisted continuous BLG reconstruction driven by carbon dissolution-segregation processes. The band gap opening was confirmed by the electrical measurements. The concept of the continuous reconstruction to achieve highly pure AB-BLG offers a new strategy to control the stacking order of catalytically grown two-dimensional materials.

Funding

JSPS KAKENHI JP16H06331

JSPS KAKENHI JP16H06333

JSPS KAKENHI JP18H03864

JSPS KAKENHI JP18K14119

JSPS KAKENHI JP19K22113

JSPS KAKENHI JP19H00755

JST CREST JPMJCR18I1

JSPS A3 Foresight Program

Partly supported by the Canon Foundation

History

Email Address of Submitting Author

pablosolisfernandez@gmail.com

Institution

Kyushu University

Country

Japan

ORCID For Submitting Author

0000-0003-1001-5874

Declaration of Conflict of Interest

No conflict of interest

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