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Intrinsically Stable Wide Band Gap Br-Free CsxFA1-xPbI3 (x=0.5-0.9) Perovskites Overcoming Phase Segregation

preprint
submitted on 04.10.2020 and posted on 05.10.2020 by Xingtao Wang, Yuetian Chen, Taiyang Zhang, Yong Wang, Miao Kan, Yanfeng Miao, Haoran Chen, Xiaomin Liu, Jielin Shi, Yixin Zhao

A ~20 nm thick compact TiO2 was deposited on patterned FTO (TEC-7) by spray pyrolysis of 0.2 M Ti (IV) bis(ethylacetoacetate)-diisopropoxide 1-butanol solution at 450 ºC followed by annealing at 450 ºC for one hour. The perovskite precursor solution was prepared by dissolving CsI, FAI, PbI2 and DMAI in 1 mL DMF and was deposited on 70 ℃ preheated c-TiO2/FTO substrate by spin coating at 3000 rpm for 30 s. The obtained precursor film was annealed at 170℃ for 40 min. A hole-transport material (HTM) solution containing 0.1 M spiro-OMeTAD, 0.035 M Li-TFSi, and 0.12 M 4-tert-butylpyridine (tBP) in chlorobenzene solution was then spin coated onto the perovskite film at 4000 rpm for 20 s. Finally, a 100 nm thick Ag was deposited as contact layer via thermal evaporator.

History

Email Address of Submitting Author

yixin.zhao@sjtu.edu.cn

Institution

Shanghai Jiao Tong University

Country

China

ORCID For Submitting Author

0000-0002-8663-9993

Declaration of Conflict of Interest

no conflict of interest

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