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A Surface Inhibiting Effect in Chemical Vapor Deposition of Boron-Carbon Thin Films from Trimethylboron

preprint
revised on 04.06.2019, 14:02 and posted on 04.06.2019, 15:22 by Laurent Souqui, Hans Högberg, Henrik Pedersen
We use the ability to control the surface chemistry in chemical vapor deposition (CVD) to deposit boron-carbon films into pores with aspects ratios of 60:1 without clogging the opening and into lateral trenches with ratios up to 2000:1. In contrast to many other surface-controlled CVD processes, operating at low temperatures (100-250 °C) and pressures (10-1000 Pa), we use trimethylboron at higher temperature (700 °C) and pressure (5000 Pa) affording a surface inhibited CVD process in hydrogen ambient. We show that the deposition rate is highly dependent on the partial pressure of hydrogen; decreasing proportionally to the logarithm of the partial pressure. The surface-controlled effect is not encountered in argon ambient. We propose that this is explained by a competitive adsorption of growth species and inhibiting dihydrogen or atomic hydrogen species following a Temkin isotherm.

Funding

Financial support from The Swedish Foundation for Strategic Research (SSF) under contract IS14-0027 is gratefully acknowledged. H.H. and H.P. acknowledge financial support from the Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linköping University (Faculty Grant SFO-Mat-LiU No. 2009-00971).

History

Email Address of Submitting Author

henrik.pedersen@liu.se

Institution

Linköping University

Country

Sweden

ORCID For Submitting Author

0000-0002-7171-5383

Declaration of Conflict of Interest

No conflicts of interest to report

Licence

Exports