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A Surface Inhibiting Effect in Chemical Vapor Deposition of Boron-Carbon Thin Films from Trimethylboron

preprint
revised on 04.06.2019 and posted on 04.06.2019 by Laurent Souqui, Hans Högberg, Henrik Pedersen
We use the ability to control the surface chemistry in chemical vapor deposition (CVD) to deposit boron-carbon films into pores with aspects ratios of 60:1 without clogging the opening and into lateral trenches with ratios up to 2000:1. In contrast to many other surface-controlled CVD processes, operating at low temperatures (100-250 °C) and pressures (10-1000 Pa), we use trimethylboron at higher temperature (700 °C) and pressure (5000 Pa) affording a surface inhibited CVD process in hydrogen ambient. We show that the deposition rate is highly dependent on the partial pressure of hydrogen; decreasing proportionally to the logarithm of the partial pressure. The surface-controlled effect is not encountered in argon ambient. We propose that this is explained by a competitive adsorption of growth species and inhibiting dihydrogen or atomic hydrogen species following a Temkin isotherm.

Funding

Financial support from The Swedish Foundation for Strategic Research (SSF) under contract IS14-0027 is gratefully acknowledged. H.H. and H.P. acknowledge financial support from the Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linköping University (Faculty Grant SFO-Mat-LiU No. 2009-00971).

History

Email Address of Submitting Author

henrik.pedersen@liu.se

Institution

Linköping University

Country

Sweden

ORCID For Submitting Author

0000-0002-7171-5383

Declaration of Conflict of Interest

No conflicts of interest to report

Licence

Exports