These are preliminary reports that have not been peer-reviewed. They should not be regarded as conclusive, guide clinical practice/health-related behavior, or be reported in news media as established information. For more information, please see our FAQs.
Resolving impurities in atomic layer deposited aluminum nitride through low cost, high efficiency precursor design
preprintrevised on 06.11.2020, 15:21 and posted on 09.11.2020, 06:03 by Sydney Buttera, Polla Rouf, Petro Deminskyi, Nathan O'Brien, Henrik Pedersen, Sean Barry
Synthesis, characterization, and use of an amidoalane precursor for the deposition of high-quality and low-impurity aluminum nitride films by atomic layer deposition. This study highlights the importance of smart precursor design in order to deposit high-quality thin films at low cost and high efficiency.