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AlH2NMe2 AlN manuscript - uploaded version 2.0.pdf (584.28 kB)

Resolving impurities in atomic layer deposited aluminum nitride through low cost, high efficiency precursor design

preprint
revised on 06.11.2020, 15:21 and posted on 09.11.2020, 06:03 by Sydney Buttera, Polla Rouf, Petro Deminskyi, Nathan O'Brien, Henrik Pedersen, Sean Barry
Synthesis, characterization, and use of an amidoalane precursor for the deposition of high-quality and low-impurity aluminum nitride films by atomic layer deposition. This study highlights the importance of smart precursor design in order to deposit high-quality thin films at low cost and high efficiency.

History

Email Address of Submitting Author

sydney.buttera@carleton.ca

Institution

Carleton University

Country

Canada

ORCID For Submitting Author

https://orcid.org/0000-0003-4085-5495

Declaration of Conflict of Interest

No conflict of interest.

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