These are preliminary reports that have not been peer-reviewed. They should not be regarded as conclusive, guide clinical practice/health-related behavior, or be reported in news media as established information. For more information, please see our FAQs.
3 files

A High-k and Low Energy-disorder Spiro-nanopolymer Semiconductor

submitted on 22.04.2021, 14:56 and posted on 23.04.2021, 10:13 by Dongqing Lin, Wenhua Zhang, Hang Yin, Haixia Hu, Chaoyang Dong, Yongxia Wang, Xinmiao Xie, Le Wang, Hongkai Hu, Yongxia Yan, Haifeng Ling, Jin’an Liu, Yue Qian, Lei Tang, Linghai Xie, Hao Zhang, He Zhang, Shasha Wang, Ying Wei, Xuefeng Guo, Dan Lu, Wei Huang

Gridization become the rising toolbox of cross-scale chemistry that update the organic pi-conjugated polymers into nano-polymers with a nano-scale persistence length that offer the cornerstone to overcome the molecular limitation for the high-performance fourth-generation semiconductors. In this work, spiro-polygridization indeed exhibit the ultralong persistence length of ~41 nm with the extraordinary semiconducting behaviors such as a hole mobility of 3.94 × 10-3 cm2 V-1 s-1 and an ultralow energy disorder (<50 meV) as well as the high dielectric constant (k = 8.43). Gridochemistry open a way to organic intelligent multimedia facing organic intelligence.


he National Natural Science Foundation of China (21774061, 22071112 and 61935017)

Natural Science Foundation major research program integration project (Grant Number 91833306)


Email Address of Submitting Author


nanjing university of post and telecommunications



ORCID For Submitting Author


Declaration of Conflict of Interest

Authors declare no competing interests