ChemRxiv
These are preliminary reports that have not been peer-reviewed. They should not be regarded as conclusive, guide clinical practice/health-related behavior, or be reported in news media as established information. For more information, please see our FAQs.
1/1
3 files

A High-k and Low Energy-disorder Spiro-nanopolymer Semiconductor

preprint
submitted on 22.04.2021, 14:56 and posted on 23.04.2021, 10:13 by Dongqing Lin, Wenhua Zhang, Hang Yin, Haixia Hu, Chaoyang Dong, Yongxia Wang, Xinmiao Xie, Le Wang, Hongkai Hu, Yongxia Yan, Haifeng Ling, Jin’an Liu, Yue Qian, Lei Tang, Linghai Xie, Hao Zhang, He Zhang, Shasha Wang, Ying Wei, Xuefeng Guo, Dan Lu, Wei Huang

Gridization become the rising toolbox of cross-scale chemistry that update the organic pi-conjugated polymers into nano-polymers with a nano-scale persistence length that offer the cornerstone to overcome the molecular limitation for the high-performance fourth-generation semiconductors. In this work, spiro-polygridization indeed exhibit the ultralong persistence length of ~41 nm with the extraordinary semiconducting behaviors such as a hole mobility of 3.94 × 10-3 cm2 V-1 s-1 and an ultralow energy disorder (<50 meV) as well as the high dielectric constant (k = 8.43). Gridochemistry open a way to organic intelligent multimedia facing organic intelligence.

Funding

he National Natural Science Foundation of China (21774061, 22071112 and 61935017)

Natural Science Foundation major research program integration project (Grant Number 91833306)

History

Email Address of Submitting Author

iamlhxie@njupt.edu.cn

Institution

nanjing university of post and telecommunications

Country

China

ORCID For Submitting Author

0000-0001-6294-5833

Declaration of Conflict of Interest

Authors declare no competing interests

Exports