A Volatile Dialane Complex from Ring-Expansion of an N-Heterocyclic Carbene and its Use in Atomic Layer Deposition of Aluminum Metal Films
2018-11-15T14:26:54Z (GMT) by
Treatment of the stable N-heterocyclic carbene (NHC) 1,3-di-<i>tert</i>-butylimidazolin-2-ylidene with two equivalents of AlH<sub>3</sub>(NMe<sub>3</sub>) afforded the structurally unusual ring expanded dialane complex <b>1</b> in 72% yield after sublimation. Complex <b>1</b> has a distorted norbornane-like C<sub>3</sub>N<sub>2</sub>Al<sub>2</sub> core with two pseudo-tetrahedral Al dihydride sites. Treatment of <b>1</b> with Cp<sub>2</sub>TiCl<sub>2</sub> as a model for metal thin film precursors produced the hydride-bridged Ti(III)-Al heterobimetallic complex <b>2</b> in 45% crystalline yield. Complex <b>1</b> shows good volatility and thermal stability, subliming at 90-100 °C and 50 mTorr and decomposing in the solid state at ~200 °C. The vapor pressure of <b>1</b> is 0.75 Torr at 120 °C. These physical properties are promising for a potential atomic layer deposition (ALD) precursor. Aluminum metal films were deposited by thermal ALD using AlCl<sub>3</sub> and <b>1</b> as precursors with a growth rate of ~3.5 Å/cycle after 100 cycles within an ALD window between 120-140 °C. The films are crystalline aluminum metal by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) analysis showed aluminum metal with 7.0 at.% C, 3.6 at.% N, and 0.9 at.% Cl impurities. The aluminum metal films had an electrically discontinuous morphology. Conductive aluminum metal films have been deposited under similar conditions using a different aluminum hydride reducing co-reactant, which highlights the impact that small precursor differences can have on film characteristics.